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| SPICE MODEL: MMBT4401T MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403T) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Dim A C TOP VIEW B E G H K N M BC SOT-523 Min 0.15 0.75 1.45 3/4 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0 Max 0.30 0.85 1.75 3/4 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8 Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 3/4 A B C D G H J K L D L Mechanical Data * * * * * * * * * Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): 2X Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) B J M N a C All Dimensions in mm E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT4401T 60 40 6.0 600 150 833 -55 to +150 Unit V V V mA mW C/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30272 Rev. 6 - 2 1 of 4 www.diodes.com MMBT4401T a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 3/4 3/4 20 40 80 100 40 3/4 0.75 3/4 3/4 3/4 1.0 0.1 40 1.0 250 Max 3/4 3/4 3/4 100 100 3/4 3/4 3/4 300 3/4 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 3/4 Unit V V V nA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 3/4 mS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz td tr ts tf 3/4 3/4 3/4 3/4 15 20 225 30 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Ordering Information (Note 4) Device MMBT4401T-7-F Notes: Packaging SOT-523 Shipping 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2X = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2XYM Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R March 3 Apr 4 2005 S 2006 T May 5 Jun 6 Jul 7 2007 U Aug 8 2008 V Sep 9 Oct O 2009 W Nov N Dec D DS30272 Rev. 6 - 2 2 of 4 www.diodes.com MMBT4401T 250 (see Note 1) 1000 NEW PRODUCT Pd, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 200 TA = 125C 150 100 TA = -25C TA = +25C 100 10 50 VCE = 1.0V 0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Power Derating Curve 200 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 30 20 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 Cibo IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 0.5 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5V TA = -50C TA = 25C TA = 150C 0.1 TA = -50C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current DS30272 Rev. 6 - 2 3 of 4 www.diodes.com MMBT4401T 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V NEW PRODUCT 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30272 Rev. 6 - 2 4 of 4 www.diodes.com MMBT4401T |
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